Shenzhen BASiC Semiconductor LTD., the leading enterprise of Wide-band Gap semiconductor industry in China, is committed to the R&D and industrialization of SiC power devices, and set up R&D centers in Nanshan Shenzhen, Pingshan Shenzhen, Pukou Nanjing, Stockholm Sweden and Nagoya Japan. BASiC has established a world-class R&D team, the core members are PhDs from University of Cambridge, KTH Royal Institute of Technology, Tsinghua University and other well-known universities.

BASiC master the global advanced core technology of SiC. The R&D fields cover the whole industrial chain of SiC power devices, such as epitaxial preparation, chip design, manufacturing process, packaging test and driver circuit application etc. Successively launched series of products such as full-current and full voltage range SiC schottky diode, the first 1200V SiC MOSFET which has passed the reliability test of industrial level in China and automotive level SiC power module etc. The products have reached the international advanced level, which are widely used in new energy generation, EV, railway traction, smart grids, defense industry and other fields.

BASiC, the initiator of Innovation Center of Advanced Devices for Future Communication, Shenzhen Institute of Wide-band Gap Semiconductors, has been approved as CAST cross-sector partnership between industry and academia integrated technology innovation service system of Wide-band Gap semiconductor synergetic innovation center. BASiC was also awarded with the honor of China IC outstanding technology innovation product, and won the first prize in China innovation and entrepreneurship competition.


Product Information



    With the characteristics of low on-resistance and low switching loss, which can reduce device loss and improve system efficiency, SiC MOSFET is more suitable for high-frequency circuits. It can be used in new energy automobile motor controller, on-board power supply, solar inverter, charging system, UPS, PFC power supply and other fields. The new generation of SiC MOSFET based on Kelvin connection package can further reduce the device loss and improve system EMI performance.

  • SiC Schottky Diodes


    As a wide bandgap semiconductor material, SiC has better performance than traditional silicon-based devices. The wide bandgap (3.26eV), high critical field (3 *106 V/cm) and high Thermal conductivity (4.9W/cm K) of SiC make power semiconductor devices more efficient and faster, and reduce the cost, volume and weight of equipment. The BASiC SiC schottky diode provides standard industrial package with superior performance and high working efficiency.